JPH0132667B2 - - Google Patents

Info

Publication number
JPH0132667B2
JPH0132667B2 JP55123085A JP12308580A JPH0132667B2 JP H0132667 B2 JPH0132667 B2 JP H0132667B2 JP 55123085 A JP55123085 A JP 55123085A JP 12308580 A JP12308580 A JP 12308580A JP H0132667 B2 JPH0132667 B2 JP H0132667B2
Authority
JP
Japan
Prior art keywords
region
emitter
epitaxial layer
conductivity type
island
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55123085A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5748266A (en
Inventor
Tadahiko Tanaka
Tsutomu Nozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP55123085A priority Critical patent/JPS5748266A/ja
Publication of JPS5748266A publication Critical patent/JPS5748266A/ja
Publication of JPH0132667B2 publication Critical patent/JPH0132667B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133Emitter regions of BJTs

Landscapes

  • Bipolar Transistors (AREA)
JP55123085A 1980-09-04 1980-09-04 Transistor Granted JPS5748266A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55123085A JPS5748266A (en) 1980-09-04 1980-09-04 Transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55123085A JPS5748266A (en) 1980-09-04 1980-09-04 Transistor

Publications (2)

Publication Number Publication Date
JPS5748266A JPS5748266A (en) 1982-03-19
JPH0132667B2 true JPH0132667B2 (en]) 1989-07-10

Family

ID=14851828

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55123085A Granted JPS5748266A (en) 1980-09-04 1980-09-04 Transistor

Country Status (1)

Country Link
JP (1) JPS5748266A (en])

Also Published As

Publication number Publication date
JPS5748266A (en) 1982-03-19

Similar Documents

Publication Publication Date Title
JPH05299658A (ja) 半導体装置及びその製造方法
JPH058582B2 (en])
JPH0132667B2 (en])
GB1593937A (en) I2l integrated circuitry
JPS5928368A (ja) 半導体容量素子
JPS6048111B2 (ja) 不揮発性半導体記憶装置
JPH0616509B2 (ja) 半導体装置の製造方法
US4097888A (en) High density collector-up structure
JPS6245710B2 (en])
JPH0156530B2 (en])
JPS5951149B2 (ja) バイポ−ラ半導体記憶装置
JP3149913B2 (ja) トランジスタの製造方法
JP2501556B2 (ja) 光センサおよびその製造方法
JPS5885572A (ja) プレ−ナ型ダイオ−ドおよびその製造方法
JPH0834244B2 (ja) 半導体集積回路装置
JP2538599B2 (ja) 半導体装置
JPS6348189B2 (en])
JPH0312782B2 (en])
JPS60123062A (ja) 半導体集積回路の製造方法
JPH079385Y2 (ja) 半導体集積回路装置
JPS6347965A (ja) 半導体集積回路
JPH01286356A (ja) 半導体集積回路
JPH0629374A (ja) 半導体集積回路装置
JPH0536700A (ja) 半導体集積回路
JPH0132666B2 (en])